For the new 512-gigabit device, Toshiba deployed leading-edge 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256-gigabit (32-gigabytes) device, and has increased memory capacity per silicon wafer, reducing the cost per bit.
Toshiba’s Memory business already mass produces 64-layer 256-gigabit (32-gigabytes) devices and will expand BiCS FLASH™ production. It will advance 3D technology to realize increased densities and finer processes in order to meet diversifying market needs.
| *1: | A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate. | |
| *2: | As of February 22, 2017. Toshiba survey. | |
| * BiCS FLASH is a trademark of Toshiba Corporation. | ||
About Toshiba
Founded in Tokyo in 1875, Toshiba Corporation is a Fortune Global 500 company that contributes to a better world and better lives with innovative technologies in Energy, Infrastructure and Storage. Guided by the philosophy of “Committed to People, Committed to the Future,” Toshiba promotes operations through a global network of 551 consolidated companies employing 188,000 people, with annual sales surpassing 5.6 trillion yen (US$50 billion; March 31, 2016).
Find out more about Toshiba at www.toshiba.co.jp/index.htm