Suja Ramnath, Integra’s President and CEO, said, “Integra’s 100V RF GaN technology signifies a major milestone in the high-power market. This innovative technology removes the barriers limiting system performance today and allows new architectures previously not possible. We are excited that this disruptive technology will enable our customers to deliver a new generation of high-performance, multi-kiloWatt RF power solutions while reducing their design cycle time and product costs.”
Dr. Mahesh Kumar, an Aerospace and Defense radar systems architect and technology executive, said, “Integra’s first to market 100V RF GaN technology will completely redefine what’s possible for high power RF systems.” By delivering approximately two times the power compared to a 50V GaN transistor in a single package, it will eliminate a significant number of combiners and associated electronic circuitry, resulting in lower system volume, weight and cost, and higher system efficiency.
Integra’s first 100V RF GaN product is the IGN1011S3600, designed specifically for avionics applications. The IGN1011S3600 delivers an industry leading 3.6 kW of output power with 19dB of gain and 70% efficiency. The IGN1011S3600, based on Integra’s 100V RF GaN, is a compelling solution for programs that require size, weight, power and cost (SWAP-C) improvements. The IGN1011S3600 100V RF GaN/SiC is available for sampling to qualified customers.
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Part Number |
IGN1011S3600 |
|
Frequency Range |
1030-1090 MHz |
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Output Power |
3600W |
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Efficiency |
70% |
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Large Signal Gain |
19 dB |
|
Drain Bias |
100V |
ABOUT INTEGRA TECHNOLOGIES, INC.
Founded in 1997, Integra is a leading innovator of RF and Microwave high power semiconductor and amplifier pallet solutions for mission-critical applications, including state-of-the-art radar, electronic warfare, and advanced communications systems. For more information visit www.integratech.com.