“GaN’s adoption in the EV market is rapidly advancing. This is largely driven by the technology’s high-power density with cost-effective, high-yield manufacturing process when compared to alternative options such as Silicon Carbide or Silicon,” said Tushar Dhayagude, Vice President of Worldwide Sales and FAE, Transphorm. “Specifically, our SuperGaN devices have achieved significant traction in two and three wheelers as they exhibit those advantages along with system and device-level cost benefits versus select Silicon solutions. Based on consistent customer design requests, we’re excited to release reference designs that can help on- or off-board charger manufacturers speed up go-to-market with GaN-based systems that can increase the performance and overall usability of next generation vehicles.”
What is CC/CV?
The Constant Current/Constant Voltage (CC/CV) lithium-ion battery charging method uses constant current in the initial stage of charging and then switches to constant voltage in later stages of charging when the battery reaches the set charge level. This ensures batteries are not overcharged.
Open-Frame CC/CV AC-to-DC Battery Chargers
The 300 W and 600 W reference designs pair the SuperGaN FETs and controllers in the popular power factor correction (PFC) and resonant LLC topologies, with the LLC being specifically designed for a wide battery range (from empty to full charge). Transphorm’s SuperGaN platform enables power system developers to maximize the PFC+LLC’s performance potential, delivering the highest efficiency possible from these topologies at a competitive cost.
The reference designs use pure analog controllers versus digital controllers that require firmware. This configuration offers several benefits such as easier designability and simplified product development driven by:
- Reduced development resource requirements.
- Reduced development time.
- Elimination of the need for potentially complex firmware programming/maintenance.
Note: The 300 W reference design includes an additional PWM input port for requesting output current levels lower than rated output value, enabling further flexibility for all battery chemistries.
Key specifications follow:
|
Reference Design |
TDAIO-TPH-ON-CCCV-300W-RD |
TDAIO-TPH-MPS-CCCV-600W-RD |
|
VAC |
90 to 264 |
90 to 264 |
|
Wattage |
300 |
600 |
|
SuperGaN FET(s) |
TP65H070G4PS x 3 |
TP65H070G4PS x 1 |
|
Driver(s) |
NCP1654 PFC (onsemi) |
HR1211 (MPS) |
|
Peak Efficiency |
95% @ 264 Vac |
94.4% @ 264 Vac |
|
Switching Frequency |
Up to 150 kHz |
Up to 120 kHz |
The reference designs leverage Transphorm’s SuperGaN FETs known for delivering differentiating advantages such as:
- Industry-leading robustness with a +/- 20 V gate threshold and a 4 V noise immunity.
- Easier designability by reducing the amount of circuitry required around the device.
- Easier drivability as FETs can pair with well-known, off-the shelf drivers common to silicon devices.
Reference Design Access
The complete 300 W and 600 W CC/CV battery charger reference designs are currently available from Transphorm. Visit the following links to download technical documentation, design files, firmware, and bill of materials:
- TDAIO-TPH-ON-CCCV-300W-RD: https://www.transphormusa.com/en/reference-design/tdaio-tph-on-cccv-300w-rd/
- TDAIO-TPH-MPS-CCCV-600W-RD: https://www.transphormusa.com/en/reference-design/tdaio-tph-mps-cccv-600w-rd/
To ensure design accuracy of the above battery chargers, power system developers should also review the following design guide:
- Constant Current/Constant Voltage (CC/CV) Application for Power Adaptor with LLC Output Stage: https://www.transphormusa.com/en/document/design-guide-design-guide-11-constant-current-constant-voltage-application-for-llc/
For more information about the SuperGaN devices included in the design tools, visit the following links:
-
TP65H070G4PS
650 V, 72 mOhm GaN FET in a TO-220 package
https://www.transphormusa.com/en/product/tp65h070g4ps/ -
TP65H150G4PS
650 V, 150 mOhm GaN FET in a TO-220 package
https://www.transphormusa.com/en/product/tp65h150g4ps/
About Transphorm
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density, and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.